triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 29-37 ghz compact driver amplifier TGA4510-EPU key features ? 0.25 um phemt technology ? >16 db nominal gain @ 30 ghz ? 16 dbm nominal psat ? bias conditions: vd = 6v, id = 60 ma ? compact chip size: 1.1 x 0.8 x 0.1 mm 3 primary applications ?lmds ? point-to-point ? base stations fixtured measured performance bias conditions: vd = 6v, id = 60 ma 5% 0 2 4 6 8 10 12 14 16 18 20 26 28 30 32 34 36 38 40 frequency (ghz) gain (db) , 0 2 4 6 8 10 12 14 16 18 20 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm) 4 2 0 -2 -4 -6 -8 -10 pwr(in)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4510-EPU table ii electrical characteristics (ta = 25 o c 5 o c) table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8v i + positive supply current (quiescent) 81ma 2/ |i g | gate current 3.5 ma p d power dissipation tbd p in input continuous wave power 18 dbm t ch operating channel temperature 150 c 3/, 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2/ total current for the entire mmic 3/ these ratings apply to each individual fet 4/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. parameter units typical frequency band ghz 29 - 37 drain operating voltage v 6 gate operating voltage v -0.6 drain current, quiescent ma 60 typical dc power consumption w 0.36 small signal gain db 15.8 C 17.6 gain flatness db < 0.05 input return loss db > 8 output return loss db > 11 toi (single tone power) @ 30 ghz dbm 22 cw output power @ p1db (dbm) dbm 14.0 C 16.2
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4510-EPU , 0 2 4 6 8 10 12 14 16 18 20 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm) 4 2 0 -2 -4 -6 -8 -10 pwr(in) note: pwr (in) = 0dbm is approximately p1db (dbm) bias conditions: vd = 6v , id = 60ma 5% measured fixtured data 0 2 4 6 8 10 12 14 16 18 20 26 28 30 32 34 36 38 40 frequency (ghz) gain (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. measured fixtured data TGA4510-EPU bias conditions: vd = 6v, id = 60ma 5% -16 -14 -12 -10 -8 -6 -4 -2 0 26 28 30 32 34 36 38 40 frequency (ghz) input return loss (db) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 26 28 30 32 34 36 38 40 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4510-EPU measured fixtured data bias conditions: vd = 6v, id = 60 ma 5%, @ 30 ghz 0 2 4 6 8 10 12 14 16 18 20 -10-8-6-4-2 0 2 4 pin (dbm) gain (db),pout (dbm) 50 55 60 65 70 75 80 85 90 95 100 id (ma) gain pout id bias conditions: vd = 6v, id = 60 ma 5%, @ 36 ghz 0 2 4 6 8 10 12 14 16 18 20 -10-8-6-4-2 0 2 4 pin (dbm) gain (db),pout (dbm) 50 55 60 65 70 75 80 85 90 95 100 id (ma) gain pout id
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4510-EPU measured fixtured data bias conditions: vd = 6v, id = 60 ma 5%, @ 30 ghz -70 -60 -50 -40 -30 -20 -10 0 10 20 30 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pin (dbm/tone) toi, fund/tone, oip3/tone (dbm) toi fund imd3 bias conditions: vd = 6v, id = 60 ma 5%, @ pin = -10dbm/tone 0 5 10 15 20 25 30 26 28 30 32 34 36 38 40 frequency (ghz) toi (dbm), gain (db) toi gain
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4510-EPU chip assembly and bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rf in rf out v d v g
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4510-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information august 5, 2002 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c. TGA4510-EPU
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